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NTZS3151P
TYPICAL PERFORMANCE CURVES (T J = 25 ° C unless otherwise noted)
1000
900
800
700
600
V DS = 0 V
C RSS
V GS = 0 V
T J = 25 ° C
5
4
3
QT
? V GS
30
25
20
500
C ISS
15
400
300
2
Q GS
Q GD
10
200
100
0
10
5
C OSS
0 5
? V GS ? V DS
10
15
20
25
1
0
0
1
? V DS I D = ? 0.77 A
T J = 25 ° C
2 3 4 5
Q G , TOTAL GATE CHARGE (nC)
6
5
0
GATE ? TO ? SOURCE OR DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
Figure 8. Gate ? to ? Source and
Drain ? to ? Source Voltage vs. Total Charge
1000
100
10
V DD = ? 25 V
I D = ? 0.95 A
V GS = ? 4.5 V
t d(off)
t f
t r
1.2
1.0
0.8
0.6
0.4
V GS = 0 V
T J = 25 ° C
1
t d(on)
0.2
0
1
10
100
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
R G , GATE RESISTANCE ( W )
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
ORDERING INFORMATION
? V SD , SOURCE ? TO ? DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
NTZS3151PT1G
NTZS3151PT1H
NTZS3151PT5G
Device
Package
SOT ? 563
(Pb ? Free)
SOT ? 563
(Pb ? Free)
SOT ? 563
(Pb ? Free)
Shipping
4000 / Tape & Reel
4000 / Tape & Reel
8000 / Tape & Reel
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Spe-
cifications Brochure, BRD8011/D.
http://onsemi.com
4
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